DIE BESTIMMUNG DES DURCHLAESSIGKEITSWERTES KF IN GRUNDWASSERFERNEN MINERALBOEDEN MIT HILFE DER FILTERROHRMETHODE (LA DETERMINATION DE LA VALEUR KF DE LA PERMEABILITE DES SOLS MINERAUX ELOIGNES DES EAUX SOUTERRAINES A L'AIDE DE LA METHODE DU TUBEKNOLL D.1969; WISSENSCH. Z. ERNST-MORITZ-ARNDT-UNIV. GREIFSWALD, MATH.-NATURWISSENSCH. REIHE; DDR; 1969, VOL. 17, P. 29 A 43Miscellaneous

POLYMER-PROTEIN INTERACTIONS: COMPARISON OF EXPERIMENT AND EXCLUDED VOLUME THEORYKNOLL D; HERMANS J.1983; JOURNAL OF BIOLOGICAL CHEMISTRY; ISSN 0021-9258; USA; DA. 1983; VOL. 258; NO 9; PP. 5710-5715; BIBL. 27 REF.Article

EIN VERBESSERTES MODELL FUER DEN SYSTEMATISCHEN FEHLER BEI DER T-PROFILMESSUNG IN DIFFUSIONSOEFEN = AN IMPROVED MODEL FOT THE SYSTEMATIC ERROR IN THE MEASUREMENT OF THE TEMPERATURE PROFILE IN DIFFUSION FURNACES = MODELE AMELIORE DE L'ERREUR SYSTEMATIQUE DANS LA MESURE DU PROFIL DE TEMPERATURE DANS LES FOURS A DIFFUSIONKNOLL D; SCHLOTE J.1982; EXPERIMENTELLE TECHNIK DER PHYSIK; ISSN 0014-4924; DDR; DA. 1982; VOL. 30; NO 1; PP. 39-49; ABS. ENG; BIBL. 10 REF.Article

REDISTRIBUTION OF HEAVY METAL IMPURITIES IN SILICON BY PHOSPHORUS DIFFUSIONKNOLL D; FISCHER A.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 4; PP. 497-504; ABS. GER; BIBL. 5 REF.Article

Verbindungstechnik. Verkleben von glasfaserverstärkten Duroplasten = Joining technology. The bonding of glass fiber reinforced thermosetsKNOLL, D.Plastverarbeiter. 1989, Vol 40, Num 11, pp 172-180, issn 0032-1338, 5 p.Article

AXIALE INHOMOGENITAET DER STATIONAEREN TEMPERATURVERTEILUNG BEI DER HOCHTEMPERATURBEARBEITUNG GROSSER SILIZIUM-SCHEIBEN. II: EINFLUSS VON STRAHLUNGSREFLEKTOREN = INHOMOGENEITE AXIALE DE LA DISTRIBUTION DE TEMPERATURE STATIONNAIRE DANS LE CAS D'UN TRAITEMENT A HAUTE TEMPERATURE DE PASTILLES EN SILICIUM IMPORTANTES. INFLUENCE DE REFLECTEURS DE RAYONNEMENTSCHLOTE J; KNOLL D.1981; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1981; VOL. 29; NO 2; PP. 157-164; ABS. ENG; BIBL. 4 REF.Article

Computational study of ITER-like dissipative divertor plasmas in the collisional limitKNOLL, D. A.Nuclear fusion. 1998, Vol 38, Num 1, pp 133-146, issn 0029-5515Article

SYSTEMATISCHE FEHLER BEI DER MESSUNG DES TEMPERATURPROFILS IN DIFFUSIONSOEFEN. I. THEORETISCHE BETRACHTUNG = SYSTEMATIC ERROR IN THE MEASUREMENT OF TEMPERATURE PROFILE IN DIFFUSION FURNACES. I. THEORETICAL CONSIDERATIONS = ERREUR SYSTEMATIQUE DANS LA MESURE DU PROFIL DE TEMPERATURE DANS DES FOURS A DIFFUSION. I. CONSIDERATIONS THEORIQUESSCHLOTE J; KNOLL D; TEUCHERT HJ et al.1979; EXPER. TECH. PHYS.; DDR; DA. 1979; VOL. 27; NO 5; PP. 481-489; ABS. ENG; BIBL. 6 REF.Article

SYSTEMATISCHE FEHLER BEI DER MESSUNG DES TEMPERATURPROFILS IN DIFFUSIONSOEFEN. II. EXPERIMENTELLE ERGEHNINE = SYSTEMATIC ERREUR IN THE MEASUREMENT OF THE TEMPERATURE PROFILE IN DIFFUSION FURNACES. II. EXPERIMENTAL RESULTS = ERREUR SYSTEMATIQUE DANS LA MESURE DU PROFIL DE TEMPERATURE DANS LES FOURS DE DIFFUSION. II. RESULTATS EXPERIMENTAUXSCHLOTE J; KNOLL D; TEUCHERT HJ et al.1979; EXPER. TECH. PHYS.; DDR; DA. 1979; VOL. 27; NO 6; PP. 585-591; ABS. ENG; BIBL. 3 REF.Article

BiCMOS integration of SiGe:C heterojunction bipolar transistorsKNOLL, D; HEINEMANN, B; EHWALD, K. E et al.Bipolar / BiCMOS circuits and technology meeting. 2002, pp 162-166, isbn 0-7803-7561-0, 5 p.Conference Paper

Plant-microbe interactions : Wetting of Ivy (Hedera helix L.) leaf surfaces in relation to colonization by epiphytic microorganismsKNOLL, D; SCHREIBER, L.Microbial ecology. 2000, Vol 40, Num 1, pp 33-42, issn 0095-3628Article

Influence of mechanical stress on thermal oxidation phenomana of siliconKNOLL, D; GRABOLLA, T; BUGIEL, E et al.Crystal research and technology (1979). 1987, Vol 22, Num 5, pp 713-722, issn 0232-1300Article

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenchesHEINEMANN, B; BARTH, R; KNOLL, D et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S153-S157Conference Paper

Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technologyWINKLER, W; BORNGRÄBER, J; HAAK, U et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 297-305, issn 0169-4332, 9 p.Conference Paper

Base currents on Si/SiGe/Si HBT in dependence on the processing conditionsKNOLL, D; FISCHER, G; EHWALD, K. E et al.Applied surface science. 1996, Vol 102, pp 247-251, issn 0169-4332Conference Paper

A simple photometric device analysing cuticular transport physiology : surfactant effect on permeability of isolated cuticular membranes of Prunus laurocerasus LSCHREIBER, L; BACH, S; KIRSCH, T et al.Journal of experimental botany. 1995, Vol 46, Num 293, pp 1915-1921, issn 0022-0957Article

Novel collector design for high-speed SiGe:C HBTsHEINEMANN, B; RÜCKER, H; HÖPPNER, W et al.IEDm : international electron devices meeting. 2002, pp 775-778, isbn 0-7803-7462-2, 4 p.Conference Paper

A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT moduleKNOLL, D; EHWALD, K. E; HÖPPNER, W et al.IEDm : international electron devices meeting. 2002, pp 783-786, isbn 0-7803-7462-2, 4 p.Conference Paper

Carbon-containing group IV heterostructures on Si : properties and device applicationsOSTEN, H. J; BARTH, R; FISCHER, G et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 11-14, issn 0040-6090Conference Paper

Gettering and precipitation behaviour of MBE related heavy metal impurities in dependence on silicon self-interstitial supersaturationKISSINGER, G; MORGENSTERN, G; KNOLL, D et al.Physica status solidi. A. Applied research. 1995, Vol 150, Num 2, pp 733-742, issn 0031-8965Article

Characterization of soluble polymerized fibrin formed in the presemce of excess fibrinogen fragment DKNOLL, D; HANTGAN, R; WILLIAMS, J et al.Biochemistry (Easton). 1984, Vol 23, Num 16, pp 3708-3715, issn 0006-2960Article

Electrical and thermal characterization of a novel high pressure gas cooled DC power cableRODRIGO, H; SALMHOFER, F; KWAG, D. S et al.Cryogenics (Guildford). 2012, Vol 52, Num 4-6, pp 310-314, issn 0011-2275, 5 p.Conference Paper

Integration of high-performance SiGe:C hbts with thin-film SOI CMOSRÜCKER, H; HEINEMANN, B; MARSCHMEYER, S et al.International Electron Devices Meeting. 2004, pp 239-242, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A low-parasitic collector construction for high-speed SiGe:C HBTsHEINEMANN, B; BARTH, R; KUCK, B et al.International Electron Devices Meeting. 2004, pp 251-254, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Comparison of SiGe and SiGe:C heterojunction bipolar transistorsKNOLL, D; HEINEMANN, B; EHWALD, K.-E et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 342-346, issn 0040-6090Conference Paper